Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
Radio frequency (RF) power source: up to 600 W at 13.56 MHz.
Electrode temperature range: -150 °C to 300 °C.
Unique process gases: hexafluoroethane (C2F6), octafluorocyclobutane (C4F8), trifluormethane (CHF3), and hydrogen.
Anisotropic etching of silicon, silicon oxide and silicon nitride.
Low temperature silicon etching.
